description of part number p thy r istor for circuit prote c tion part number p 0 3 0 0 s b code main suffix product type product type p type median voltage rating code median voltage rating 0 30 30 v construction variable code product shape 0 one chip 1 unidirectional part 2 two chips 3 three chips package type code package type e t o ?9 2 m d o -27 s s m b/ do?214aa r s m a/do-214ac l do -15 ipp ra ting cod e ipp ra ting b 2 5 0 a ( 8 x 2 0 s) c 4 0 0 a ( 8 x 2 0 s) d 1000 a (8x20 s) a 1 5 0 a (8x20 s) applica t ions whe n prote c t i ng telecom m unication circuits, p device s are conn ected a c ro ss tip and ring for metallic protection and a c ro ss ti p and g r oun d and rin g an d grou nd for l ongitudi nal protection. the y typically are place d behi n d some type of curren t-limiting devi c e. co mmon appli c ation s inclu de: ? central office line ca rd s (slics) ? t-1/e-1, isdn, an d xdsl transmissio n equipm ent ? custome r p r emi s e s equi pment (cpe) su ch a s pho n e s, mode ms, and caller id adjun ct boxe s ? pbxs, ksu s, and other switches ? primary prot ection in clu d ing main di stri bution fram es, five-pin mod u les, buil d ing entran c e e qui pment, and st ation prote c tion mo dule s ? dat a lines a nd se cu rit y sy st em s ? catv line amplifiers and power in se rte r s ? s p rinkle r sy st em s thyristor/ sm b ser ies rev.201 4 . 05 . 01 0 1 | www.spsemi.cn
d o - 2 1 4 a a ( s m b j - b e n d) 0. 1 55 (3 . 94) 0. 1 30 (3 . 30) 0 . 08 6 (2. 2 0) 0 . 07 3 (1. 8 5) 0. 1 93 (4. 90 ) 0. 16 0 (4. 06) 0. 1 0 2 ( 2 . 6 ) 0.0 8 3 ( 2 .1 ) 0 . 2 2 0 (5 . 59) 0 . 19 5 ( 4 . 95 ) 0.0 60 ( 1 .52 ) 0.0 30 ( 0 .76 ) d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r s ) 0 . 01 2 (0. 3 0 5 ) 0 . 00 6 (0. 1 5 2 ) p device ? s s e r i e s ? do -214a a p solid stat e prote c tion device s prote c t t e le c o m m u ni c at i o n s e q u i p m ent s u c h as modem s, line card s, fax machi n e s , and other cpe. p devices are u s ed to e nable e quipm ent to meet variou s regul atory req u ire m ents in cludi n g gr 10 89, itu k.20, k.21 and k.45, iec 609 50, ul 6095 0, and t i a-968 (fo r me rly kno w n a s fcc pa rt 68). electrical parameters p a r t number * v r m v o l t s v s v o l t s v t v o l t s i d r m a m p s i s m a m p s i t a m p s * * i h m a m p s c o p f p 0 0 8 0 s _ 6 2 5 4 5 8 0 0 2 . 2 5 0 50-125 p 0 3 0 0 s _ 2 5 4 0 4 5 8 0 0 2 . 2 1 5 0 7 0 - 1 7 5 p 0 6 4 0 s _ 5 8 7 7 4 5 8 0 0 2 . 2 1 5 0 5 5 - 1 4 0 p 0 7 2 0 s _ 6 5 8 8 4 5 8 0 0 2 . 2 1 5 0 55-140 p 0 9 0 0 s _ 7 5 9 8 4 5 8 0 0 2 . 2 1 5 0 55-140 p 2 300 s _ 190 260 4 5 8 0 0 2 . 2 1 5 0 45 - 11 5 p 2 600 s _ 220 300 4 5 800 2.2 150 4 0 -1 00 p 3 100 s _ 2 75 3 5 0 4 5 800 2.2 150 35 - 90 p 3 5 0 0 s _ 3 20 4 00 4 5 800 2.2 150 3 0- 75 surge ratings s e r i e s i p p 2 x 1 0 s a m p s i p p 8 x 2 0 s a m p s i p p 1 0 x 1 6 0 s a m p s i p p 1 0 x 5 6 0 s a m p s i p p 1 0 x 1 0 0 0 s a m p s i t s m 6 0 h z a m p s d i / d t a m p s / s a 1 5 0 1 5 0 9 0 5 0 4 5 2 0 5 0 0 b 2 5 0 2 5 0 1 5 0 1 0 0 8 0 3 0 5 0 0 c 5 0 0 4 0 0 2 0 0 1 5 0 1 0 0 5 0 5 0 0 thermal considerations p a c k a g e d o - 2 1 4 a a symbol para mete r value unit t j o p e r a t i n g j u n c t i o n t e m p e r a t u r e - 4 0 t o + 1 5 0 c t s s t o r a g e t e m p e r a t u r e r a n g e - 6 5 t o + 1 5 0 c r b j a t h e r m a l resistance: junction to ambient 9 0 c /w 2 6 * f or i nd i vi d ual ? s a ? , ? s b ? , a nd ? s c ? s urge rat i ng s , s ee t abl e bel o w thyristor/ sm b ser ies rev.201 4 . 05 . 01 0 2 | www.spsemi.cn 0 . 0 12 (0.3) ma x.
the basic characteristic of the p ? the principl e introduc tio n opera t ion in the standb y mode, p devices exhi bit a high off-state impeda nce, eliminati ng exce ssive leakag e cu rrents and app eari n g transp a rent to the circuit s they protec t. upon appli c ation of a voltage exce e d ing the swit chin g voltage (v s ), p devices cro w b a r an d simulate a sh ort circuit co n d ition until the curre n t flowing throug h the device is eith er interrupte d or drop s bel o w the p device?s hol ding current (i h ). once this occurs , p device s reset and return to their hi gh off-state i m peda nce. figure1 v-i characteristics figure2 tr x td pulse wave-form figure3 normalized v s change versus junction temperature figure4 normalized dc holdin g current thyristor/ sm b ser ies rev.201 4 . 05 . 01 0 3 | www.spsemi.cn
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